University of Basel  > Condensed Matter Theory

Mathias Duckheim

 
Address:  Office 4.8
Department of Physics
University of Basel
Klingelbergstrasse 82
CH-4056 Basel, Switzerland
e-mail:  Mathias.Duckheim@unibas.ch
phone (office):  +41 61 267 3731 
fax:  +41 61 267 1349



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Now at Dahlem Center for Complex Quantum systems


Publications
Spin Accumulation in Diffusive Conductors with Rashba and Dresselhaus Spin-Orbit Interaction
Mathias Duckheim, Daniel Loss, Matthias Scheid, Klaus Richter, Inanc Adagideli, Philippe Jacquod
arXiv:0909.4253v1 [cond-mat.mes-hall]

We calculate the electrically induced spin accumulation in diffusive systems due to both Rashba (with strength $\alpha$) and Dresselhaus (with strength $\beta$) spin-orbit interaction. Using a diffusion equation approach we find that magnetoelectric effects disappear and that there is thus no spin accumulation when both interactions have the same strength, $\alpha=\pm \beta$. In thermodynamically large systems, the finite spin accumulation predicted by Chaplik, Entin and Magarill, [Physica E 13, 744 (2002)] and by Trushin and Schliemann [Phys. Rev. B 75, 155323 (2007)] is recovered an infinitesimally small distance away from the singular point $\alpha=\pm \beta$. We show however that the singularity is broadened and that the suppression of spin accumulation becomes physically relevant (i) in finite-sized systems of size $L$, (ii) in the presence of a cubic Dresselhaus interaction of strength $\gamma$, or (iii) for finite frequency measurements. We obtain the parametric range over which the magnetoelectric effect is suppressed in these three instances as (i) $|\alpha|-|\beta| \lesssim 1/mL$, (ii)$|\alpha|-|\beta| \lesssim \gamma p\rm F^2$, and (iii) $|\alpha|-|\beta| \lesssiM \sqrt{\omega/m p\rm F\ell}$ with $\ell$ the elastic mean free path and $p\rm F$ the Fermi momentum. We attribute the absence of spin accumulation close to $\alpha=\pm \beta$ to the underlying U (1) symmetry. We illustrate and confirm our predictions numerically.


Dynamic spin-Hall effect and driven spin helix for linear spin-orbit interactions
Mathias Duckheim, Dmitrii L. Maslov, Daniel Loss
arXiv:0909.1892v1 [cond-mat.mes-hall]

We derive boundary conditions for the electrically induced spin accumulation in a finite 2D semiconductor channel. While for DC electric fields these boundary conditions select spatially constant spin profiles equivalent to a vanishing spin-Hall effect, we show that an in-plane ac electric field results in a non-zero ac spin-Hall effect, i.e., it generates a spatially non-uniform out-of-plane polarization even for linear intrinsic spin-orbit interactions. Analyzing different geometries in [001] and [110]-grown quantum wells, we find that although this out-of-plane polarization is typically confined to within a few spin-orbit lengths from the channel edges, it is also possible to generate spatially oscillating spin profiles which extend over the whole channel. The latter is due to the excitation of a driven spin-helix mode in the transverse direction of the channel. We show that while finite frequencies suppress this mode, it can be amplified by a magnetic field tuned to resonance with the frequency of the electric field. In this case, finite size effects at equal strengths of Rashba- and Dresselhaus SOI lead to an enhancement of the magnitude of this helix mode. We comment on the relation between spin currents and boundary conditions.


Semiconductor spintronics: Snapshots of spins separating
Mathias Duckheim and Daniel Loss
Nature Physics 4, 836 - 837 (2008), News and Views

Theories of the spin Hall effect suggest that spin currents generated by electric fields accumulate spin polarization at the sample edges. Now an experiment has observed this conversion in real time.


Mesoscopic fluctuations in the spin-electric susceptibility due to Rashba spin-orbit interaction
Mathias Duckheim and Daniel Loss
Phys. Rev. Lett. 101, 226602 (2008); arXiv:0805.4143v1 [cond-mat.mes-hall]

We investigate mesoscopic fluctuations in the spin polarization generated by a static electric field and by Rashba spin-orbit interaction in a disordered 2D electron gas. In a diagrammatic approach we find that the out-of-plane polarization -- while being zero for self-averaging systems -- exhibits large sample-to-sample fluctuations which are shown to be well within experimental reach. We evaluate the disorder-averaged variance of the susceptibility and find its dependence on magnetic field, spin-orbit interaction, dephasing, and chemical potential difference.


Resonant spin polarization and spin current in a two-dimensional electron gas
Mathias Duckheim and Daniel Loss
Phys. Rev. B 75, 201305(R) (2007); cond-mat/0701559

We study the spin polarization and its associated spin-Hall current due to EDSR in disordered two-dimensional electron systems. We show that the disorder induced damping of the resonant spin polarization can be strongly reduced by an optimal field configuration that exploits the interference between Rashba and Dresselhaus spin-orbit interaction. This leads to a striking enhancement of the spin susceptibility while the spin-Hall current vanishes at the same time. We give an interpretation of the spin current in geometrical terms which are associated with the trajectories the polarization describes in spin space.


Electric-dipole-induced spin resonance in disordered semiconductors
Mathias Duckheim and Daniel Loss
Nature Physics 2, 195-199 (2006); Supplementary Information

One of the hallmarks of spintronics is the control of magnetic moments by electric fields enabled by strong spin-orbit interaction (SOI) in semiconductors. A powerful way of manipulating spins in such structures is electric-dipole-induced spin resonance (EDSR), where the radio-frequency fields driving the spins are electric, not magnetic as in standard paramagnetic resonance. Here, we present a theoretical study of EDSR for a two-dimensional electron gas in the presence of disorder, where random impurities not only determine the electric resistance but also the spin dynamics through SOI. Considering a specific geometry with the electric and magnetic fields parallel and in-plane, we show that the magnetization develops an out-of-plane component at resonance that survives the presence of disorder. We also discuss the spin Hall current generated by EDSR. These results are derived in a diagrammatic approach, with the dominant effects coming from the spin vertex correction, and the optimal parameter regime for observation is identified.
See also, 'Semiconductor physics: Electric fields drive spins', by Emmanuel I. Rashba, Nature Physics 2, 149-150 (01 Mar 2006) News and Views.


Influence of low-frequency noise on macroscopic quantum tunneling in superconducting circuits
M. Duckheim and J. Ankerhold
Phys. Rev. B 71, 134501 (2005); cond-mat/0411633.

The influence of low to moderate frequency environments on Macroscopic Quantum Tunneling (MQT) in superconducting circuits is studied within the Im-F approach to evaluate tunneling rates. Particular attention is paid to two model environments, namely, a pure sluggish bath and a sluggish bath with additional 1/f-noise. General findings are applied to Zener flip tunneling, a MQT phenomenon recently predicted and observed in a superconducting circuit implementing a quantum bit.



Pictures

pictures from Maui and New York, SpintechIV conference, Maui, 2007